STMicroelectronics · Discrete semiconductors
A1F25M12W2-F1
ACEPACK 1 POWER MODULE, FOURPACK
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A1F25M12W2-F1 specifications
Recorded source facts. Missing values are kept explicit; verify the exact manufacturer document before design approval.
| Manufacturer | STMicroelectronics |
|---|---|
| Ordering code | A1F25M12W2-F1 |
| Family | Discrete semiconductors |
| Package | Module |
| Product Status | Active |
| Technology | Silicon Carbide (SiC) |
| Configuration | 4 N-Channel |
| FET Feature | Silicon Carbide (SiC) |
| Drain to Source Voltage (Vdss) | 1200V |
| Current - Continuous Drain (Id) @ 25°C | 50A |
| Rds On (Max) @ Id, Vgs | 34mOhm @ 50A, 18V |
| Vgs(th) (Max) @ Id | 4.9V @ 5mA |
| Gate Charge (Qg) (Max) @ Vgs | 147nC @ 18V |
| Input Capacitance (Ciss) (Max) @ Vds | 3500pF @ 800V |
| Power - Max | Not provided in source |
| Operating Temperature | 175°C (TJ) |
| Mounting Type | Chassis Mount |
| Package / Case | Module |
| Supplier Device Package | ACEPACK 1 |
Documents and evidence
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