STMicroelectronics · Discrete semiconductors
A1P50S65M2-F
IGBT MOD 650V 50A 208W ACEPACK1
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A1P50S65M2-F specifications
Recorded source facts. Missing values are kept explicit; verify the exact manufacturer document before design approval.
| Manufacturer | STMicroelectronics |
|---|---|
| Ordering code | A1P50S65M2-F |
| Family | Discrete semiconductors |
| Package | Module |
| Product Status | Active |
| IGBT Type | Trench Field Stop |
| Configuration | Three Phase Inverter |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector (Ic) (Max) | 50 A |
| Power - Max | 208 W |
| Vce(on) (Max) @ Vge, Ic | 2.3V @ 15V, 50A |
| Current - Collector Cutoff (Max) | 100 µA |
| Input Capacitance (Cies) @ Vce | 4.15 nF @ 25 V |
| Input | Standard |
| NTC Thermistor | Yes |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Chassis Mount |
| Package / Case | Module |
| Supplier Device Package | ACEPACK™ 1 |
Documents and evidence
A1P50S65M2-F ↗Before sourcing A1P50S65M2-F
- Identify the firmware and board baseline
- Check flash, RAM and required peripherals
- Review pin assignment and supply limits
- Keep the full temperature and package suffix
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