STMicroelectronics · Discrete semiconductors
BU808DFI
TRANS NPN DARL 700V ISOWATT218
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BU808DFI specifications
Recorded source facts. Missing values are kept explicit; verify the exact manufacturer document before design approval.
| Manufacturer | STMicroelectronics |
|---|---|
| Ordering code | BU808DFI |
| Family | Discrete semiconductors |
| Package | ISOWATT-218-3 |
| Product Status | Obsolete |
| Transistor Type | NPN - Darlington |
| Current - Collector (Ic) (Max) | 8 A |
| Voltage - Collector Emitter Breakdown (Max) | 700 V |
| Vce Saturation (Max) @ Ib, Ic | 1.6V @ 500mA, 5A |
| Current - Collector Cutoff (Max) | 400µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 5A, 5V |
| Power - Max | 52 W |
| Frequency - Transition | Not provided in source |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | ISOWATT-218-3 |
| Supplier Device Package | ISOWATT-218 |
Documents and evidence
BU808DFI ↗Before sourcing BU808DFI
- Identify the firmware and board baseline
- Check flash, RAM and required peripherals
- Review pin assignment and supply limits
- Keep the full temperature and package suffix
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