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STMicroelectronics · Discrete semiconductors

BUZ10

MOSFET N-CH 50V 23A TO220AB

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BUZ10 component illustration
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BUZ10 specifications

Recorded source facts. Missing values are kept explicit; verify the exact manufacturer document before design approval.

ManufacturerSTMicroelectronics
Ordering codeBUZ10
FamilyDiscrete semiconductors
PackageTO-220-3
Product StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)50 V
Current - Continuous Drain (Id) @ 25°C23A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs70mOhm @ 14A, 10V
Vgs(th) (Max) @ Id4V @ 1mA
Gate Charge (Qg) (Max) @ VgsNot provided in source
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds900 pF @ 25 V
FET FeatureNot provided in source
Power Dissipation (Max)75W (Tc)
Operating Temperature175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220
Package / CaseTO-220-3

Documents and evidence

BUZ10 ↗

Catalog sources

www.ic-components.com · BUZ10 ↗

Source directory identity match; source detail pending. Specifications remain from existing catalog.

Before sourcing BUZ10

  1. Identify the firmware and board baseline
  2. Check flash, RAM and required peripherals
  3. Review pin assignment and supply limits
  4. Keep the full temperature and package suffix
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Questions about BUZ10

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