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STMicroelectronics · Discrete semiconductors

BYT30PI-1000RG

DIODE GEN PURP 1KV 30A DOP3I

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BYT30PI-1000RG component illustration
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BYT30PI-1000RG specifications

Recorded source facts. Missing values are kept explicit; verify the exact manufacturer document before design approval.

ManufacturerSTMicroelectronics
Ordering codeBYT30PI-1000RG
FamilyDiscrete semiconductors
PackageDOP3I-2 Insulated (Straight Leads)
Product StatusObsolete
TechnologyStandard
Voltage - DC Reverse (Vr) (Max)1000 V
Current - Average Rectified (Io)30A
Voltage - Forward (Vf) (Max) @ If1.9 V @ 30 A
SpeedFast Recovery = 200mA (Io)
Reverse Recovery Time (trr)165 ns
Current - Reverse Leakage @ Vr100 µA @ 1000 V
Capacitance @ Vr, FNot provided in source
Mounting TypeThrough Hole
Package / CaseDOP3I-2 Insulated (Straight Leads)
Supplier Device PackageDOP3I
Operating Temperature - Junction-40°C ~ 150°C

Documents and evidence

BYT30PI-1000RG ↗

Catalog sources

www.ic-components.com · BYT30PI-1000RG ↗

Source directory identity match; source detail pending. Specifications remain from existing catalog.

Before sourcing BYT30PI-1000RG

  1. Identify the firmware and board baseline
  2. Check flash, RAM and required peripherals
  3. Review pin assignment and supply limits
  4. Keep the full temperature and package suffix
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Questions about BYT30PI-1000RG

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Related records aid discovery. Package, pinout, ratings, tooling and software require engineering approval before substitution.

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