STMicroelectronics · Discrete semiconductors
MJD112T4
TRANS NPN DARL 100V 2A DPAK
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MJD112T4 specifications
Recorded source facts. Missing values are kept explicit; verify the exact manufacturer document before design approval.
| Manufacturer | STMicroelectronics |
|---|---|
| Ordering code | MJD112T4 |
| Family | Discrete semiconductors |
| Package | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Product Status | Active |
| Transistor Type | NPN - Darlington |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 40mA, 4A |
| Current - Collector Cutoff (Max) | 20µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 2A, 3V |
| Power - Max | 20 W |
| Frequency - Transition | 25MHz |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package | DPAK |
Documents and evidence
MJD112T4 ↗Catalog sources
www.ic-components.com · MJD112T4 ↗Source directory identity match; source detail pending. Specifications remain from existing catalog.
Before sourcing MJD112T4
- Identify the firmware and board baseline
- Check flash, RAM and required peripherals
- Review pin assignment and supply limits
- Keep the full temperature and package suffix
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