STMicroelectronics · Discrete semiconductors
PD20010S-E
TRANS RF N-CH FET POWERSO-10RF
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PD20010S-E specifications
Recorded source facts. Missing values are kept explicit; verify the exact manufacturer document before design approval.
| Manufacturer | STMicroelectronics |
|---|---|
| Ordering code | PD20010S-E |
| Family | Discrete semiconductors |
| Package | PowerSO-10RF Exposed Bottom Pad (2 Straight Leads) |
| Product Status | Obsolete |
| Technology | LDMOS |
| Configuration | Not provided in source |
| Frequency | 2GHz |
| Gain | 11dB |
| Voltage - Test | 13.6 V |
| Current Rating (Amps) | 5A |
| Noise Figure | Not provided in source |
| Current - Test | 150 mA |
| Power - Output | 10W |
| Voltage - Rated | 40 V |
| Mounting Type | Not provided in source |
| Package / Case | PowerSO-10RF Exposed Bottom Pad (2 Straight Leads) |
| Supplier Device Package | PowerSO-10RF (Straight Lead) |
Documents and evidence
PD20010S-E ↗Before sourcing PD20010S-E
- Identify the firmware and board baseline
- Check flash, RAM and required peripherals
- Review pin assignment and supply limits
- Keep the full temperature and package suffix
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