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STMicroelectronics · Discrete semiconductors

SCT040HU65G3AG

AUTOMOTIVE-GRADE SILICON CARBIDE

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SCT040HU65G3AG component illustration
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SCT040HU65G3AG specifications

Recorded source facts. Missing values are kept explicit; verify the exact manufacturer document before design approval.

ManufacturerSTMicroelectronics
Ordering codeSCT040HU65G3AG
FamilyDiscrete semiconductors
PackageTO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Product StatusActive
FET TypeN-Channel
TechnologySiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)15V, 18V
Rds On (Max) @ Id, Vgs55mOhm @ 20A, 18V
Vgs(th) (Max) @ Id4.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs39.5 nC @ 18 V
Vgs (Max)+22V, -10V
Input Capacitance (Ciss) (Max) @ Vds920 pF @ 400 V
FET FeatureNot provided in source
Power Dissipation (Max)221W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageHU3PAK
Package / CaseTO-263-8, D²Pak (7 Leads + Tab), TO-263CA

Documents and evidence

SCT040HU65G3AG ↗

Catalog sources

www.ic-components.com · SCT040HU65G3AG ↗

Source directory identity match; source detail pending. Specifications remain from existing catalog.

Before sourcing SCT040HU65G3AG

  1. Identify the firmware and board baseline
  2. Check flash, RAM and required peripherals
  3. Review pin assignment and supply limits
  4. Keep the full temperature and package suffix
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