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STMicroelectronics · Discrete semiconductors

SCT1000N170

HIP247 IN LINE

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SCT1000N170 component illustration
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SCT1000N170 specifications

Recorded source facts. Missing values are kept explicit; verify the exact manufacturer document before design approval.

ManufacturerSTMicroelectronics
Ordering codeSCT1000N170
FamilyDiscrete semiconductors
PackageTO-247-3
Product StatusActive
FET TypeN-Channel
TechnologySiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)1700 V
Current - Continuous Drain (Id) @ 25°C7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)20V
Rds On (Max) @ Id, Vgs1.3Ohm @ 3A, 20V
Vgs(th) (Max) @ Id3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs13.3 nC @ 20 V
Vgs (Max)+22V, -10V
Input Capacitance (Ciss) (Max) @ Vds133 pF @ 1000 V
FET FeatureNot provided in source
Power Dissipation (Max)96W (Tc)
Operating Temperature-55°C ~ 200°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageHiP247™
Package / CaseTO-247-3

Documents and evidence

SCT1000N170 ↗

Catalog sources

www.ic-components.com · SCT1000N170 ↗

Source directory identity match; source detail pending. Specifications remain from existing catalog.

Before sourcing SCT1000N170

  1. Identify the firmware and board baseline
  2. Check flash, RAM and required peripherals
  3. Review pin assignment and supply limits
  4. Keep the full temperature and package suffix
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