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STMicroelectronics · Discrete semiconductors

SCT10N120

SICFET N-CH 1200V 12A HIP247

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SCT10N120 component illustration
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SCT10N120 specifications

Recorded source facts. Missing values are kept explicit; verify the exact manufacturer document before design approval.

ManufacturerSTMicroelectronics
Ordering codeSCT10N120
FamilyDiscrete semiconductors
PackageTO-247-3
Product StatusActive
FET TypeN-Channel
TechnologySiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)1200 V
Current - Continuous Drain (Id) @ 25°C12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)20V
Rds On (Max) @ Id, Vgs690mOhm @ 6A, 20V
Vgs(th) (Max) @ Id3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs22 nC @ 20 V
Vgs (Max)+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds290 pF @ 400 V
FET FeatureNot provided in source
Power Dissipation (Max)150W (Tc)
Operating Temperature-55°C ~ 200°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageHiP247™
Package / CaseTO-247-3

Documents and evidence

SCT10N120 ↗

Catalog sources

www.ic-components.com · SCT10N120 ↗

Source directory identity match; source detail pending. Specifications remain from existing catalog.

Before sourcing SCT10N120

  1. Identify the firmware and board baseline
  2. Check flash, RAM and required peripherals
  3. Review pin assignment and supply limits
  4. Keep the full temperature and package suffix
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