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STMicroelectronics · Discrete semiconductors

SCTH35N65G2V-7AG

SICFET N-CH 650V 45A H2PAK-7

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SCTH35N65G2V-7AG component illustration
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SCTH35N65G2V-7AG specifications

Recorded source facts. Missing values are kept explicit; verify the exact manufacturer document before design approval.

ManufacturerSTMicroelectronics
Ordering codeSCTH35N65G2V-7AG
FamilyDiscrete semiconductors
PackageTO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Product StatusActive
FET TypeN-Channel
TechnologySiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C45A (Tc)
Drive Voltage (Max Rds On, Min Rds On)18V, 20V
Rds On (Max) @ Id, Vgs67mOhm @ 20A, 20V
Vgs(th) (Max) @ Id3.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs73 nC @ 20 V
Vgs (Max)+22V, -10V
Input Capacitance (Ciss) (Max) @ Vds1370 pF @ 400 V
FET FeatureNot provided in source
Power Dissipation (Max)208W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageH2PAK-7
Package / CaseTO-263-8, D²Pak (7 Leads + Tab), TO-263CA

Documents and evidence

SCTH35N65G2V-7AG ↗

Catalog sources

www.ic-components.com · SCTH35N65G2V-7AG ↗

Source directory identity match; source detail pending. Specifications remain from existing catalog.

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  2. Check flash, RAM and required peripherals
  3. Review pin assignment and supply limits
  4. Keep the full temperature and package suffix
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