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STMicroelectronics · Discrete semiconductors

SCTH50N120-7

SICFET N-CH 1200V 65A H2PAK-7

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SCTH50N120-7 component illustration
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SCTH50N120-7 specifications

Recorded source facts. Missing values are kept explicit; verify the exact manufacturer document before design approval.

ManufacturerSTMicroelectronics
Ordering codeSCTH50N120-7
FamilyDiscrete semiconductors
PackageTO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Product StatusObsolete
FET TypeN-Channel
TechnologySiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)1200 V
Current - Continuous Drain (Id) @ 25°C65A
Drive Voltage (Max Rds On, Min Rds On)20V
Rds On (Max) @ Id, Vgs69mOhm @ 40A, 20V
Vgs(th) (Max) @ Id5.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs122 nC @ 20 V
Vgs (Max)+22V, -10V
Input Capacitance (Ciss) (Max) @ Vds1900 pF @ 400 V
FET FeatureNot provided in source
Power Dissipation (Max)270W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageH2PAK-7
Package / CaseTO-263-8, D²Pak (7 Leads + Tab), TO-263CA

Documents and evidence

SCTH50N120-7 ↗

Before sourcing SCTH50N120-7

  1. Identify the firmware and board baseline
  2. Check flash, RAM and required peripherals
  3. Review pin assignment and supply limits
  4. Keep the full temperature and package suffix
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