STMicroelectronics · Discrete semiconductors
SCTW90N65G2V
SICFET N-CH 650V 90A HIP247
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SCTW90N65G2V specifications
Recorded source facts. Missing values are kept explicit; verify the exact manufacturer document before design approval.
| Manufacturer | STMicroelectronics |
|---|---|
| Ordering code | SCTW90N65G2V |
| Family | Discrete semiconductors |
| Package | TO-247-3 |
| Product Status | Active |
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 90A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 50A, 18V |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 157 nC @ 18 V |
| Vgs (Max) | +22V, -10V |
| Input Capacitance (Ciss) (Max) @ Vds | 3300 pF @ 400 V |
| FET Feature | Not provided in source |
| Power Dissipation (Max) | 390W (Tc) |
| Operating Temperature | -55°C ~ 200°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | HiP247™ |
| Package / Case | TO-247-3 |
Documents and evidence
SCTW90N65G2V ↗Catalog sources
www.ic-components.com · SCTW90N65G2V ↗Source directory identity match; source detail pending. Specifications remain from existing catalog.
Before sourcing SCTW90N65G2V
- Identify the firmware and board baseline
- Check flash, RAM and required peripherals
- Review pin assignment and supply limits
- Keep the full temperature and package suffix
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