STMicroelectronics · Discrete semiconductors
SCTWA35N65G2V
TRANS SJT N-CH 650V 45A TO247
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SCTWA35N65G2V specifications
Recorded source facts. Missing values are kept explicit; verify the exact manufacturer document before design approval.
| Manufacturer | STMicroelectronics |
|---|---|
| Ordering code | SCTWA35N65G2V |
| Family | Discrete semiconductors |
| Package | TO-247-3 |
| Product Status | Active |
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 45A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 18V, 20V |
| Rds On (Max) @ Id, Vgs | 72mOhm @ 20A, 20V |
| Vgs(th) (Max) @ Id | 3.2V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 73 nC @ 20 V |
| Vgs (Max) | +20V, -5V |
| Input Capacitance (Ciss) (Max) @ Vds | 73000 pF @ 400 V |
| FET Feature | Not provided in source |
| Power Dissipation (Max) | 208W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247 Long Leads |
| Package / Case | TO-247-3 |
Documents and evidence
SCTWA35N65G2V ↗Before sourcing SCTWA35N65G2V
- Identify the firmware and board baseline
- Check flash, RAM and required peripherals
- Review pin assignment and supply limits
- Keep the full temperature and package suffix
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