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STMicroelectronics · Discrete semiconductors

SCTWA70N120G2V-4

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SCTWA70N120G2V-4 component illustration
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SCTWA70N120G2V-4 specifications

Recorded source facts. Missing values are kept explicit; verify the exact manufacturer document before design approval.

ManufacturerSTMicroelectronics
Ordering codeSCTWA70N120G2V-4
FamilyDiscrete semiconductors
PackageTO-247-4
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)1200 V
Current - Continuous Drain (Id) @ 25°C91A (Tc)
Drive Voltage (Max Rds On, Min Rds On)18V
Rds On (Max) @ Id, Vgs30mOhm @ 50A, 18V
Vgs(th) (Max) @ Id4.9V @ 1mA
Gate Charge (Qg) (Max) @ Vgs150 nC @ 18 V
Vgs (Max)+22V, -10V
Input Capacitance (Ciss) (Max) @ Vds3540 pF @ 800 V
FET FeatureNot provided in source
Power Dissipation (Max)547W
Operating Temperature-55°C ~ 200°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247-4
Package / CaseTO-247-4

Documents and evidence

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Catalog sources

www.ic-components.com · SCTWA70N120G2V-4 ↗

Source directory identity match; source detail pending. Specifications remain from existing catalog.

Before sourcing SCTWA70N120G2V-4

  1. Identify the firmware and board baseline
  2. Check flash, RAM and required peripherals
  3. Review pin assignment and supply limits
  4. Keep the full temperature and package suffix
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