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STMicroelectronics · Discrete semiconductors

SH68N65DM6AG

AUTOMOTIVE-GRADE N-CHANNEL 650 V

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SH68N65DM6AG component illustration
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SH68N65DM6AG specifications

Recorded source facts. Missing values are kept explicit; verify the exact manufacturer document before design approval.

ManufacturerSTMicroelectronics
Ordering codeSH68N65DM6AG
FamilyDiscrete semiconductors
Package9-PowerSMD
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Configuration2 N-Channel (Half Bridge)
FET FeatureNot provided in source
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C64A (Tc)
Rds On (Max) @ Id, Vgs41mOhm @ 23A, 10V
Vgs(th) (Max) @ Id4.75V @ 250µA
Gate Charge (Qg) (Max) @ Vgs116nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds5900pF @ 100V
Power - Max379W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case9-PowerSMD
Supplier Device Package9-ACEPACK SMIT

Documents and evidence

SH68N65DM6AG ↗

Catalog sources

www.ic-components.com · SH68N65DM6AG ↗

Source directory identity match; source detail pending. Specifications remain from existing catalog.

Before sourcing SH68N65DM6AG

  1. Identify the firmware and board baseline
  2. Check flash, RAM and required peripherals
  3. Review pin assignment and supply limits
  4. Keep the full temperature and package suffix
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