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STMicroelectronics · Discrete semiconductors

STB13NM50N

MOSFET N-CH 500V 12A D2PAK

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STB13NM50N component illustration
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STB13NM50N specifications

Recorded source facts. Missing values are kept explicit; verify the exact manufacturer document before design approval.

ManufacturerSTMicroelectronics
Ordering codeSTB13NM50N
FamilyDiscrete semiconductors
PackageTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Product StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500 V
Current - Continuous Drain (Id) @ 25°C12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs320mOhm @ 6A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs30 nC @ 10 V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds960 pF @ 50 V
FET FeatureNot provided in source
Power Dissipation (Max)100W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD2PAK
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Documents and evidence

STB13NM50N ↗

Catalog sources

www.ic-components.com · STB13NM50N ↗

Source directory identity match; source detail pending. Specifications remain from existing catalog.

Before sourcing STB13NM50N

  1. Identify the firmware and board baseline
  2. Check flash, RAM and required peripherals
  3. Review pin assignment and supply limits
  4. Keep the full temperature and package suffix
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Questions about STB13NM50N

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