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STMicroelectronics · Discrete semiconductors

STB15N65M5

MOSFET N-CH 650V 11A D2PAK

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STB15N65M5 component illustration
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STB15N65M5 specifications

Recorded source facts. Missing values are kept explicit; verify the exact manufacturer document before design approval.

ManufacturerSTMicroelectronics
Ordering codeSTB15N65M5
FamilyDiscrete semiconductors
PackageTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Product StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C11A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs340mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs22 nC @ 10 V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds810 pF @ 100 V
FET FeatureNot provided in source
Power Dissipation (Max)85W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD²PAK (TO-263)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Documents and evidence

STB15N65M5 ↗

Catalog sources

www.ic-components.com · STB15N65M5 ↗

Source directory identity match; source detail pending. Specifications remain from existing catalog.

Before sourcing STB15N65M5

  1. Identify the firmware and board baseline
  2. Check flash, RAM and required peripherals
  3. Review pin assignment and supply limits
  4. Keep the full temperature and package suffix
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