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STMicroelectronics · Discrete semiconductors

STB20NM60D

MOSFET N-CH 600V 20A D2PAK

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STB20NM60D component illustration
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STB20NM60D specifications

Recorded source facts. Missing values are kept explicit; verify the exact manufacturer document before design approval.

ManufacturerSTMicroelectronics
Ordering codeSTB20NM60D
FamilyDiscrete semiconductors
PackageTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs290mOhm @ 10A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs52 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1300 pF @ 25 V
FET FeatureNot provided in source
Power Dissipation (Max)192W (Tc)
Operating Temperature-65°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD2PAK
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Documents and evidence

STB20NM60D ↗

Catalog sources

www.ic-components.com · STB20NM60D ↗

Source directory identity match; source detail pending. Specifications remain from existing catalog.

Before sourcing STB20NM60D

  1. Identify the firmware and board baseline
  2. Check flash, RAM and required peripherals
  3. Review pin assignment and supply limits
  4. Keep the full temperature and package suffix
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