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STMicroelectronics · Discrete semiconductors

STB23NM50N

MOSFET N-CH 500V 17A D2PAK

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STB23NM50N component illustration
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STB23NM50N specifications

Recorded source facts. Missing values are kept explicit; verify the exact manufacturer document before design approval.

ManufacturerSTMicroelectronics
Ordering codeSTB23NM50N
FamilyDiscrete semiconductors
PackageTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500 V
Current - Continuous Drain (Id) @ 25°C17A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs190mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs45 nC @ 10 V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds1330 pF @ 50 V
FET FeatureNot provided in source
Power Dissipation (Max)125W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD²PAK (TO-263)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Documents and evidence

STB23NM50N ↗

Catalog sources

www.ic-components.com · STB23NM50N ↗

Source directory identity match; source detail pending. Specifications remain from existing catalog.

Before sourcing STB23NM50N

  1. Identify the firmware and board baseline
  2. Check flash, RAM and required peripherals
  3. Review pin assignment and supply limits
  4. Keep the full temperature and package suffix
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