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STMicroelectronics · Discrete semiconductors

STB25NF06AG

MOSFET N-CH 60V 19A D2PAK

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STB25NF06AG component illustration
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STB25NF06AG specifications

Recorded source facts. Missing values are kept explicit; verify the exact manufacturer document before design approval.

ManufacturerSTMicroelectronics
Ordering codeSTB25NF06AG
FamilyDiscrete semiconductors
PackageTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Product StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60 V
Current - Continuous Drain (Id) @ 25°C19A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, VgsNot provided in source
Vgs(th) (Max) @ IdNot provided in source
Gate Charge (Qg) (Max) @ VgsNot provided in source
Vgs (Max)Not provided in source
Input Capacitance (Ciss) (Max) @ VdsNot provided in source
FET FeatureNot provided in source
Power Dissipation (Max)50W (Tc)
Operating TemperatureNot provided in source
Mounting TypeSurface Mount
Supplier Device PackageD²PAK (TO-263)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Documents and evidence

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Catalog sources

www.ic-components.com · STB25NF06AG ↗

Source directory identity match; source detail pending. Specifications remain from existing catalog.

Before sourcing STB25NF06AG

  1. Identify the firmware and board baseline
  2. Check flash, RAM and required peripherals
  3. Review pin assignment and supply limits
  4. Keep the full temperature and package suffix
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