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STMicroelectronics · Discrete semiconductors

STB5N52K3

MOSFET N-CH 525V 4.4A D2PAK

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STB5N52K3 component illustration
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STB5N52K3 specifications

Recorded source facts. Missing values are kept explicit; verify the exact manufacturer document before design approval.

ManufacturerSTMicroelectronics
Ordering codeSTB5N52K3
FamilyDiscrete semiconductors
PackageTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Product StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)525 V
Current - Continuous Drain (Id) @ 25°C4.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.5Ohm @ 2.2A, 10V
Vgs(th) (Max) @ Id4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs17 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds545 pF @ 100 V
FET FeatureNot provided in source
Power Dissipation (Max)70W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD²PAK (TO-263)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Documents and evidence

STB5N52K3 ↗

Catalog sources

www.ic-components.com · STB5N52K3 ↗

Source directory identity match; source detail pending. Specifications remain from existing catalog.

Before sourcing STB5N52K3

  1. Identify the firmware and board baseline
  2. Check flash, RAM and required peripherals
  3. Review pin assignment and supply limits
  4. Keep the full temperature and package suffix
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