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STMicroelectronics · Discrete semiconductors

STB60N55F3

MOSFET N-CH 55V 80A D2PAK

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STB60N55F3 component illustration
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STB60N55F3 specifications

Recorded source facts. Missing values are kept explicit; verify the exact manufacturer document before design approval.

ManufacturerSTMicroelectronics
Ordering codeSTB60N55F3
FamilyDiscrete semiconductors
PackageTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Product StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)55 V
Current - Continuous Drain (Id) @ 25°C80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs8.5mOhm @ 32A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs45 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2200 pF @ 25 V
FET FeatureNot provided in source
Power Dissipation (Max)110W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD2PAK
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Documents and evidence

STB60N55F3 ↗

Catalog sources

www.ic-components.com · STB60N55F3 ↗

Source directory identity match; source detail pending. Specifications remain from existing catalog.

Before sourcing STB60N55F3

  1. Identify the firmware and board baseline
  2. Check flash, RAM and required peripherals
  3. Review pin assignment and supply limits
  4. Keep the full temperature and package suffix
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