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STMicroelectronics · Discrete semiconductors

STB80NF55-08-1

MOSFET N-CH 55V 80A I2PAK

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STB80NF55-08-1 component illustration
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STB80NF55-08-1 specifications

Recorded source facts. Missing values are kept explicit; verify the exact manufacturer document before design approval.

ManufacturerSTMicroelectronics
Ordering codeSTB80NF55-08-1
FamilyDiscrete semiconductors
PackageTO-262-3 Long Leads, I²Pak, TO-262AA
Product StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)55 V
Current - Continuous Drain (Id) @ 25°C80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs8mOhm @ 40A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs155 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3850 pF @ 25 V
FET FeatureNot provided in source
Power Dissipation (Max)300W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI2PAK
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

Documents and evidence

STB80NF55-08-1 ↗

Catalog sources

www.ic-components.com · STB80NF55-08-1 ↗

Source directory identity match; source detail pending. Specifications remain from existing catalog.

Before sourcing STB80NF55-08-1

  1. Identify the firmware and board baseline
  2. Check flash, RAM and required peripherals
  3. Review pin assignment and supply limits
  4. Keep the full temperature and package suffix
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