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STMicroelectronics · Discrete semiconductors

STB85NS04Z

MOSFET N-CH 33V 80A D2PAK

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STB85NS04Z component illustration
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STB85NS04Z specifications

Recorded source facts. Missing values are kept explicit; verify the exact manufacturer document before design approval.

ManufacturerSTMicroelectronics
Ordering codeSTB85NS04Z
FamilyDiscrete semiconductors
PackageTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Product StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)33 V
Current - Continuous Drain (Id) @ 25°C80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs15mOhm @ 30A, 10V
Vgs(th) (Max) @ Id4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs100 nC @ 10 V
Vgs (Max)±18V
Input Capacitance (Ciss) (Max) @ Vds2500 pF @ 25 V
FET FeatureNot provided in source
Power Dissipation (Max)215W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD2PAK
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Documents and evidence

STB85NS04Z ↗

Catalog sources

www.ic-components.com · STB85NS04Z ↗

Source directory identity match; source detail pending. Specifications remain from existing catalog.

Before sourcing STB85NS04Z

  1. Identify the firmware and board baseline
  2. Check flash, RAM and required peripherals
  3. Review pin assignment and supply limits
  4. Keep the full temperature and package suffix
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