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STMicroelectronics · Discrete semiconductors

STD12N60DM2AG

AUTOMOTIVE-GRADE N-CHANNEL 600 V

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STD12N60DM2AG component illustration
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STD12N60DM2AG specifications

Recorded source facts. Missing values are kept explicit; verify the exact manufacturer document before design approval.

ManufacturerSTMicroelectronics
Ordering codeSTD12N60DM2AG
FamilyDiscrete semiconductors
PackageTO-252-3, DPak (2 Leads + Tab), SC-63
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C10A (Tc)
Drive Voltage (Max Rds On, Min Rds On)0V, 10V
Rds On (Max) @ Id, Vgs430mOhm @ 5A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs14.5 nC @ 10 V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds614 pF @ 100 V
FET FeatureNot provided in source
Power Dissipation (Max)110W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD-PAK (TO-252)
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

Documents and evidence

STD12N60DM2AG ↗

Before sourcing STD12N60DM2AG

  1. Identify the firmware and board baseline
  2. Check flash, RAM and required peripherals
  3. Review pin assignment and supply limits
  4. Keep the full temperature and package suffix
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