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STMicroelectronics · Discrete semiconductors

STD12N60M2

MOSFET N-CHANNEL 600V 9A DPAK

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STD12N60M2 component illustration
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STD12N60M2 specifications

Recorded source facts. Missing values are kept explicit; verify the exact manufacturer document before design approval.

ManufacturerSTMicroelectronics
Ordering codeSTD12N60M2
FamilyDiscrete semiconductors
PackageTO-252-3, DPak (2 Leads + Tab), SC-63
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs450mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs16 nC @ 10 V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds538 pF @ 100 V
FET FeatureNot provided in source
Power Dissipation (Max)85W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDPAK
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

Documents and evidence

STD12N60M2 ↗

Catalog sources

www.ic-components.com · STD12N60M2 ↗

Source directory identity match; source detail pending. Specifications remain from existing catalog.

Before sourcing STD12N60M2

  1. Identify the firmware and board baseline
  2. Check flash, RAM and required peripherals
  3. Review pin assignment and supply limits
  4. Keep the full temperature and package suffix
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Questions about STD12N60M2

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