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STMicroelectronics · Discrete semiconductors

STD12NM50N

MOSFET N-CH 500V 11A DPAK

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STD12NM50N component illustration
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STD12NM50N specifications

Recorded source facts. Missing values are kept explicit; verify the exact manufacturer document before design approval.

ManufacturerSTMicroelectronics
Ordering codeSTD12NM50N
FamilyDiscrete semiconductors
PackageTO-252-3, DPak (2 Leads + Tab), SC-63
Product StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500 V
Current - Continuous Drain (Id) @ 25°C11A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs380mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs30 nC @ 10 V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds940 pF @ 50 V
FET FeatureNot provided in source
Power Dissipation (Max)100W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDPAK
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

Documents and evidence

STD12NM50N ↗

Catalog sources

www.ic-components.com · STD12NM50N ↗

Source directory identity match; source detail pending. Specifications remain from existing catalog.

Before sourcing STD12NM50N

  1. Identify the firmware and board baseline
  2. Check flash, RAM and required peripherals
  3. Review pin assignment and supply limits
  4. Keep the full temperature and package suffix
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