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STMicroelectronics · Discrete semiconductors

STD80N6F7

MOSFET N-CH 60V 40A DPAK

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STD80N6F7 component illustration
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STD80N6F7 specifications

Recorded source facts. Missing values are kept explicit; verify the exact manufacturer document before design approval.

ManufacturerSTMicroelectronics
Ordering codeSTD80N6F7
FamilyDiscrete semiconductors
PackageTO-252-3, DPak (2 Leads + Tab), SC-63
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60 V
Current - Continuous Drain (Id) @ 25°C40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs25 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1600 pF @ 30 V
FET FeatureNot provided in source
Power Dissipation (Max)100W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD-PAK (TO-252)
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

Documents and evidence

STD80N6F7 ↗

Catalog sources

www.ic-components.com · STD80N6F7 ↗

Source directory identity match; source detail pending. Specifications remain from existing catalog.

Before sourcing STD80N6F7

  1. Identify the firmware and board baseline
  2. Check flash, RAM and required peripherals
  3. Review pin assignment and supply limits
  4. Keep the full temperature and package suffix
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