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STMicroelectronics · Discrete semiconductors

STE26NA90

MOSFET N-CH 900V 26A ISOTOP

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STE26NA90 component illustration
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STE26NA90 specifications

Recorded source facts. Missing values are kept explicit; verify the exact manufacturer document before design approval.

ManufacturerSTMicroelectronics
Ordering codeSTE26NA90
FamilyDiscrete semiconductors
PackageISOTOP
Product StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)900 V
Current - Continuous Drain (Id) @ 25°C26A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs300mOhm @ 13A, 10V
Vgs(th) (Max) @ Id3.75V @ 1mA
Gate Charge (Qg) (Max) @ Vgs660 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1770 pF @ 25 V
FET FeatureNot provided in source
Power Dissipation (Max)450W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeChassis Mount
Supplier Device PackageISOTOP®
Package / CaseISOTOP

Documents and evidence

STE26NA90 ↗

Catalog sources

www.ic-components.com · STE26NA90 ↗

Source directory identity match; source detail pending. Specifications remain from existing catalog.

Before sourcing STE26NA90

  1. Identify the firmware and board baseline
  2. Check flash, RAM and required peripherals
  3. Review pin assignment and supply limits
  4. Keep the full temperature and package suffix
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