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STMicroelectronics · Discrete semiconductors

STF15NM65N

MOSFET N-CH 650V 12A TO220FP

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STF15NM65N component illustration
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STF15NM65N specifications

Recorded source facts. Missing values are kept explicit; verify the exact manufacturer document before design approval.

ManufacturerSTMicroelectronics
Ordering codeSTF15NM65N
FamilyDiscrete semiconductors
PackageTO-220-3 Full Pack
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs380mOhm @ 6A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs33.3 nC @ 10 V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds983 pF @ 50 V
FET FeatureNot provided in source
Power Dissipation (Max)30W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220FP
Package / CaseTO-220-3 Full Pack

Documents and evidence

STF15NM65N ↗

Catalog sources

www.ic-components.com · STF15NM65N ↗

Source directory identity match; source detail pending. Specifications remain from existing catalog.

Before sourcing STF15NM65N

  1. Identify the firmware and board baseline
  2. Check flash, RAM and required peripherals
  3. Review pin assignment and supply limits
  4. Keep the full temperature and package suffix
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