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STMicroelectronics · Discrete semiconductors

STF26NM60N

MOSFET N-CH 600V 20A TO220FP

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STF26NM60N component illustration
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STF26NM60N specifications

Recorded source facts. Missing values are kept explicit; verify the exact manufacturer document before design approval.

ManufacturerSTMicroelectronics
Ordering codeSTF26NM60N
FamilyDiscrete semiconductors
PackageTO-220-3 Full Pack
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs165mOhm @ 10A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs60 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1800 pF @ 50 V
FET FeatureNot provided in source
Power Dissipation (Max)35W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220FP
Package / CaseTO-220-3 Full Pack

Documents and evidence

STF26NM60N ↗

Catalog sources

www.ic-components.com · STF26NM60N ↗

Source directory identity match; source detail pending. Specifications remain from existing catalog.

Before sourcing STF26NM60N

  1. Identify the firmware and board baseline
  2. Check flash, RAM and required peripherals
  3. Review pin assignment and supply limits
  4. Keep the full temperature and package suffix
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