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STMicroelectronics · Discrete semiconductors

STFI15N65M5

MOSFET N CH 650V 11A I2PAKFP

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STFI15N65M5 component illustration
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STFI15N65M5 specifications

Recorded source facts. Missing values are kept explicit; verify the exact manufacturer document before design approval.

ManufacturerSTMicroelectronics
Ordering codeSTFI15N65M5
FamilyDiscrete semiconductors
PackageTO-262-3 Full Pack, I²Pak
Product StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C11A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs340mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs22 nC @ 10 V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds816 pF @ 100 V
FET FeatureNot provided in source
Power Dissipation (Max)30W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI2PAKFP (TO-281)
Package / CaseTO-262-3 Full Pack, I²Pak

Documents and evidence

STFI15N65M5 ↗

Before sourcing STFI15N65M5

  1. Identify the firmware and board baseline
  2. Check flash, RAM and required peripherals
  3. Review pin assignment and supply limits
  4. Keep the full temperature and package suffix
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