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STMicroelectronics · Discrete semiconductors

STFI20NM65N

MOSFET N-CH 650V 15A I2PAKFP

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STFI20NM65N component illustration
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STFI20NM65N specifications

Recorded source facts. Missing values are kept explicit; verify the exact manufacturer document before design approval.

ManufacturerSTMicroelectronics
Ordering codeSTFI20NM65N
FamilyDiscrete semiconductors
PackageTO-262-3 Full Pack, I²Pak
Product StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C15A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs270mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs44 nC @ 10 V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds1280 pF @ 50 V
FET FeatureNot provided in source
Power Dissipation (Max)30W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI2PAKFP (TO-281)
Package / CaseTO-262-3 Full Pack, I²Pak

Documents and evidence

STFI20NM65N ↗

Catalog sources

www.ic-components.com · STFI20NM65N ↗

Source directory identity match; source detail pending. Specifications remain from existing catalog.

Before sourcing STFI20NM65N

  1. Identify the firmware and board baseline
  2. Check flash, RAM and required peripherals
  3. Review pin assignment and supply limits
  4. Keep the full temperature and package suffix
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