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STMicroelectronics · Discrete semiconductors

STFI26N60M2

MOSFET N-CH 600V 20A I2PAKFP

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STFI26N60M2 component illustration
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STFI26N60M2 specifications

Recorded source facts. Missing values are kept explicit; verify the exact manufacturer document before design approval.

ManufacturerSTMicroelectronics
Ordering codeSTFI26N60M2
FamilyDiscrete semiconductors
PackageTO-262-3 Full Pack, I²Pak
Product StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs165mOhm @ 11A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ VgsNot provided in source
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ VdsNot provided in source
FET FeatureNot provided in source
Power Dissipation (Max)30W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI2PAKFP (TO-281)
Package / CaseTO-262-3 Full Pack, I²Pak

Documents and evidence

STFI26N60M2 ↗

Catalog sources

www.ic-components.com · STFI26N60M2 ↗

Source directory identity match; source detail pending. Specifications remain from existing catalog.

Before sourcing STFI26N60M2

  1. Identify the firmware and board baseline
  2. Check flash, RAM and required peripherals
  3. Review pin assignment and supply limits
  4. Keep the full temperature and package suffix
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Questions about STFI26N60M2

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