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STMicroelectronics · Discrete semiconductors

STGB40H65FB

IGBT BIPO 650V 40A D2PAK

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STGB40H65FB component illustration
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STGB40H65FB specifications

Recorded source facts. Missing values are kept explicit; verify the exact manufacturer document before design approval.

ManufacturerSTMicroelectronics
Ordering codeSTGB40H65FB
FamilyDiscrete semiconductors
PackageTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Product StatusActive
IGBT TypeTrench Field Stop
Voltage - Collector Emitter Breakdown (Max)650 V
Current - Collector (Ic) (Max)80 A
Current - Collector Pulsed (Icm)160 A
Vce(on) (Max) @ Vge, Ic2V @ 15V, 40A
Power - Max283 W
Switching Energy498µJ (on), 363µJ (off)
Input TypeStandard
Gate Charge210 nC
Td (on/off) @ 25°C40ns/142ns
Test Condition400V, 40A, 5Ohm, 15V
Reverse Recovery Time (trr)Not provided in source
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device PackageD²PAK (TO-263)

Documents and evidence

STGB40H65FB ↗

Catalog sources

www.ic-components.com · STGB40H65FB ↗

Source directory identity match; source detail pending. Specifications remain from existing catalog.

Before sourcing STGB40H65FB

  1. Identify the firmware and board baseline
  2. Check flash, RAM and required peripherals
  3. Review pin assignment and supply limits
  4. Keep the full temperature and package suffix
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