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STMicroelectronics · Discrete semiconductors

STGB50H65FB2

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STGB50H65FB2 component illustration
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STGB50H65FB2 specifications

Recorded source facts. Missing values are kept explicit; verify the exact manufacturer document before design approval.

ManufacturerSTMicroelectronics
Ordering codeSTGB50H65FB2
FamilyDiscrete semiconductors
PackageTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Product StatusActive
IGBT TypeTrench Field Stop
Voltage - Collector Emitter Breakdown (Max)650 V
Current - Collector (Ic) (Max)86 A
Current - Collector Pulsed (Icm)150 A
Vce(on) (Max) @ Vge, Ic2V @ 15V, 50A
Power - Max272 W
Switching Energy910µJ (on), 580µJ (off)
Input TypeStandard
Gate Charge151 nC
Td (on/off) @ 25°C28ns/115ns
Test Condition400V, 50A, 4.7Ohm, 15V
Reverse Recovery Time (trr)Not provided in source
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device PackageD²PAK (TO-263)

Documents and evidence

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Catalog sources

www.ic-components.com · STGB50H65FB2 ↗

Source directory identity match; source detail pending. Specifications remain from existing catalog.

Before sourcing STGB50H65FB2

  1. Identify the firmware and board baseline
  2. Check flash, RAM and required peripherals
  3. Review pin assignment and supply limits
  4. Keep the full temperature and package suffix
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