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STMicroelectronics · Discrete semiconductors

STGB5H60DF

TRENCH GATE FIELD-STOP IGBT, H S

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STGB5H60DF component illustration
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STGB5H60DF specifications

Recorded source facts. Missing values are kept explicit; verify the exact manufacturer document before design approval.

ManufacturerSTMicroelectronics
Ordering codeSTGB5H60DF
FamilyDiscrete semiconductors
PackageTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Product StatusActive
IGBT TypeTrench Field Stop
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector (Ic) (Max)10 A
Current - Collector Pulsed (Icm)20 A
Vce(on) (Max) @ Vge, Ic1.95V @ 15V, 5A
Power - Max88 W
Switching Energy56µJ (on), 78.5µJ (off)
Input TypeStandard
Gate Charge43 nC
Td (on/off) @ 25°C30ns/140ns
Test Condition400V, 5A, 47Ohm, 15V
Reverse Recovery Time (trr)134.5 ns
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device PackageD²PAK (TO-263)

Documents and evidence

STGB5H60DF ↗

Catalog sources

www.ic-components.com · STGB5H60DF ↗

Source directory identity match; source detail pending. Specifications remain from existing catalog.

Before sourcing STGB5H60DF

  1. Identify the firmware and board baseline
  2. Check flash, RAM and required peripherals
  3. Review pin assignment and supply limits
  4. Keep the full temperature and package suffix
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