STMicroelectronics · Discrete semiconductors

STGP30H65DFB2

Name: STGP30H65DFB2
Brand: STMicroelectronics

IGBT 600V 60A 258W TO220AB

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STGP30H65DFB2 specifications

Recorded source facts. Missing values are kept explicit; verify the exact manufacturer document before design approval.

Manufacturer	STMicroelectronics
Ordering code	STGP30H65DFB2
Family	Discrete semiconductors
Package	TO-220-3
Product Status	Active
IGBT Type	Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)	650 V
Current - Collector (Ic) (Max)	50 A
Current - Collector Pulsed (Icm)	90 A
Vce(on) (Max) @ Vge, Ic	2.1V @ 15V, 30A
Power - Max	167 W
Switching Energy	270µJ (on), 310µJ (off)
Input Type	Standard
Gate Charge	90 nC
Td (on/off) @ 25°C	18.4ns/71ns
Test Condition	400V, 30A, 6.8Ohm, 15V
Reverse Recovery Time (trr)	115 ns
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-220-3
Supplier Device Package	TO-220

Documents and evidence

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