STMicroelectronics · Discrete semiconductors
STGSB200M65DF2AG
DISCRETE
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STGSB200M65DF2AG specifications
Recorded source facts. Missing values are kept explicit; verify the exact manufacturer document before design approval.
| Manufacturer | STMicroelectronics |
|---|---|
| Ordering code | STGSB200M65DF2AG |
| Family | Discrete semiconductors |
| Package | 9-PowerSMD |
| Product Status | Active |
| IGBT Type | Trench Field Stop |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector (Ic) (Max) | 216 A |
| Current - Collector Pulsed (Icm) | 700 A |
| Vce(on) (Max) @ Vge, Ic | 2.05V @ 15V, 200A |
| Power - Max | 714 W |
| Switching Energy | 3.82mJ (on), 6.97mJ (off) |
| Input Type | Standard |
| Gate Charge | 554 nC |
| Td (on/off) @ 25°C | 122ns/250ns |
| Test Condition | 400V, 200A, 4.7Ohm, 15V |
| Reverse Recovery Time (trr) | 174.5 ns |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 9-PowerSMD |
| Supplier Device Package | 9-ACEPACK SMIT |
Documents and evidence
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Catalog sources
www.ic-components.com · STGSB200M65DF2AG ↗Source directory identity match; source detail pending. Specifications remain from existing catalog.
Before sourcing STGSB200M65DF2AG
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- Check flash, RAM and required peripherals
- Review pin assignment and supply limits
- Keep the full temperature and package suffix
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