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STMicroelectronics · Discrete semiconductors

STGW100H65FB2-4

TRENCH GATE FIELD-STOP, 650 V, 1

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STGW100H65FB2-4 component illustration
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STGW100H65FB2-4 specifications

Recorded source facts. Missing values are kept explicit; verify the exact manufacturer document before design approval.

ManufacturerSTMicroelectronics
Ordering codeSTGW100H65FB2-4
FamilyDiscrete semiconductors
PackageTO-247-4
Product StatusActive
IGBT TypeTrench Field Stop
Voltage - Collector Emitter Breakdown (Max)650 V
Current - Collector (Ic) (Max)145 A
Current - Collector Pulsed (Icm)300 A
Vce(on) (Max) @ Vge, Ic1.8V @ 15V, 100A
Power - Max441 W
Switching Energy1.06mJ (on), 1.14mJ (off)
Input TypeStandard
Gate Charge288 nC
Td (on/off) @ 25°C23ns/141ns
Test Condition400V, 100A, 3.3Ohm, 15V
Reverse Recovery Time (trr)Not provided in source
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-4
Supplier Device PackageTO-247-4

Documents and evidence

STGW100H65FB2-4 ↗

Before sourcing STGW100H65FB2-4

  1. Identify the firmware and board baseline
  2. Check flash, RAM and required peripherals
  3. Review pin assignment and supply limits
  4. Keep the full temperature and package suffix
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