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STMicroelectronics · Discrete semiconductors

STGW35NB60SD

IGBT 600V 70A 200W TO247

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STGW35NB60SD component illustration
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STGW35NB60SD specifications

Recorded source facts. Missing values are kept explicit; verify the exact manufacturer document before design approval.

ManufacturerSTMicroelectronics
Ordering codeSTGW35NB60SD
FamilyDiscrete semiconductors
PackageTO-247-3
Product StatusObsolete
IGBT TypeNot provided in source
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector (Ic) (Max)70 A
Current - Collector Pulsed (Icm)250 A
Vce(on) (Max) @ Vge, Ic1.7V @ 15V, 20A
Power - Max200 W
Switching Energy840µJ (on), 7.4mJ (off)
Input TypeStandard
Gate Charge83 nC
Td (on/off) @ 25°C92ns/1.1µs
Test Condition480V, 20A, 100Ohm, 15V
Reverse Recovery Time (trr)44 ns
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageTO-247-3

Documents and evidence

STGW35NB60SD ↗

Catalog sources

www.ic-components.com · STGW35NB60SD ↗

Source directory identity match; source detail pending. Specifications remain from existing catalog.

Before sourcing STGW35NB60SD

  1. Identify the firmware and board baseline
  2. Check flash, RAM and required peripherals
  3. Review pin assignment and supply limits
  4. Keep the full temperature and package suffix
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