STMicroelectronics · Discrete semiconductors
STGW60H65DF
IGBT 650V 120A 360W TO247
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STGW60H65DF specifications
Recorded source facts. Missing values are kept explicit; verify the exact manufacturer document before design approval.
| Manufacturer | STMicroelectronics |
|---|---|
| Ordering code | STGW60H65DF |
| Family | Discrete semiconductors |
| Package | TO-247-3 |
| Product Status | Obsolete |
| IGBT Type | Trench Field Stop |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector (Ic) (Max) | 120 A |
| Current - Collector Pulsed (Icm) | 240 A |
| Vce(on) (Max) @ Vge, Ic | 1.9V @ 15V, 60A |
| Power - Max | 360 W |
| Switching Energy | 1.5mJ (on), 1.1mJ (off) |
| Input Type | Standard |
| Gate Charge | 206 nC |
| Td (on/off) @ 25°C | 67ns/165ns |
| Test Condition | 400V, 60A, 10Ohm, 15V |
| Reverse Recovery Time (trr) | 62 ns |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Supplier Device Package | TO-247-3 |
Documents and evidence
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Catalog sources
www.ic-components.com · STGW60H65DF ↗Source directory identity match; source detail pending. Specifications remain from existing catalog.
Before sourcing STGW60H65DF
- Identify the firmware and board baseline
- Check flash, RAM and required peripherals
- Review pin assignment and supply limits
- Keep the full temperature and package suffix
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