STMicroelectronics · Discrete semiconductors

STGWA60H65DFB

Name: STGWA60H65DFB
Brand: STMicroelectronics

IGBT BIPO 650V 60A TO247-3

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STGWA60H65DFB specifications

Recorded source facts. Missing values are kept explicit; verify the exact manufacturer document before design approval.

Manufacturer	STMicroelectronics
Ordering code	STGWA60H65DFB
Family	Discrete semiconductors
Package	TO-247-3
Product Status	Active
IGBT Type	Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)	650 V
Current - Collector (Ic) (Max)	80 A
Current - Collector Pulsed (Icm)	240 A
Vce(on) (Max) @ Vge, Ic	2V @ 15V, 60A
Power - Max	375 W
Switching Energy	1.59mJ (on), 900µJ (off)
Input Type	Standard
Gate Charge	306 nC
Td (on/off) @ 25°C	66ns/210ns
Test Condition	400V, 60A, 10Ohm, 15V
Reverse Recovery Time (trr)	60 ns
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3
Supplier Device Package	TO-247-3

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