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STMicroelectronics · Discrete semiconductors

STGWA60NC60WDR

IGBT 600V 130A 340W TO247

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STGWA60NC60WDR component illustration
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STGWA60NC60WDR specifications

Recorded source facts. Missing values are kept explicit; verify the exact manufacturer document before design approval.

ManufacturerSTMicroelectronics
Ordering codeSTGWA60NC60WDR
FamilyDiscrete semiconductors
PackageTO-247-3
Product StatusObsolete
IGBT TypeNot provided in source
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector (Ic) (Max)130 A
Current - Collector Pulsed (Icm)250 A
Vce(on) (Max) @ Vge, Ic2.6V @ 15V, 40A
Power - Max340 W
Switching Energy743µJ (on), 560µJ (off)
Input TypeStandard
Gate Charge195 nC
Td (on/off) @ 25°C40ns/240ns
Test Condition390V, 40A, 10Ohm, 15V
Reverse Recovery Time (trr)42 ns
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageTO-247 Long Leads

Documents and evidence

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Before sourcing STGWA60NC60WDR

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  2. Check flash, RAM and required peripherals
  3. Review pin assignment and supply limits
  4. Keep the full temperature and package suffix
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