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STMicroelectronics · Discrete semiconductors

STGWA80H65FB

IGBT 650V 120A 469W TO247

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STGWA80H65FB component illustration
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STGWA80H65FB specifications

Recorded source facts. Missing values are kept explicit; verify the exact manufacturer document before design approval.

ManufacturerSTMicroelectronics
Ordering codeSTGWA80H65FB
FamilyDiscrete semiconductors
PackageTO-247-3
Product StatusActive
IGBT TypeTrench Field Stop
Voltage - Collector Emitter Breakdown (Max)650 V
Current - Collector (Ic) (Max)120 A
Current - Collector Pulsed (Icm)240 A
Vce(on) (Max) @ Vge, Ic2V @ 15V, 80A
Power - Max469 W
Switching Energy2.1mJ (on), 1.5mJ (off)
Input TypeStandard
Gate Charge414 nC
Td (on/off) @ 25°C84ns/280ns
Test Condition400V, 80A, 10Ohm, 15V
Reverse Recovery Time (trr)Not provided in source
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageTO-247 Long Leads

Documents and evidence

STGWA80H65FB ↗

Catalog sources

www.ic-components.com · STGWA80H65FB ↗

Source directory identity match; source detail pending. Specifications remain from existing catalog.

Before sourcing STGWA80H65FB

  1. Identify the firmware and board baseline
  2. Check flash, RAM and required peripherals
  3. Review pin assignment and supply limits
  4. Keep the full temperature and package suffix
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