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STMicroelectronics · Discrete semiconductors

STGWT40H65DFB

IGBT 650V 80A 283W TO3P-3L

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STGWT40H65DFB component illustration
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STGWT40H65DFB specifications

Recorded source facts. Missing values are kept explicit; verify the exact manufacturer document before design approval.

ManufacturerSTMicroelectronics
Ordering codeSTGWT40H65DFB
FamilyDiscrete semiconductors
PackageTO-3P-3, SC-65-3
Product StatusActive
IGBT TypeTrench Field Stop
Voltage - Collector Emitter Breakdown (Max)650 V
Current - Collector (Ic) (Max)80 A
Current - Collector Pulsed (Icm)160 A
Vce(on) (Max) @ Vge, Ic2V @ 15V, 40A
Power - Max283 W
Switching Energy498µJ (on), 363µJ (off)
Input TypeStandard
Gate Charge210 nC
Td (on/off) @ 25°C40ns/142ns
Test Condition400V, 40A, 5Ohm, 15V
Reverse Recovery Time (trr)62 ns
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-3P-3, SC-65-3
Supplier Device PackageTO-3P

Documents and evidence

STGWT40H65DFB ↗

Catalog sources

www.ic-components.com · STGWT40H65DFB ↗

Source directory identity match; source detail pending. Specifications remain from existing catalog.

Before sourcing STGWT40H65DFB

  1. Identify the firmware and board baseline
  2. Check flash, RAM and required peripherals
  3. Review pin assignment and supply limits
  4. Keep the full temperature and package suffix
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