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STMicroelectronics · Discrete semiconductors

STGWT80V60DF

IGBT 600V 120A 469W TO-3P

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STGWT80V60DF component illustration
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STGWT80V60DF specifications

Recorded source facts. Missing values are kept explicit; verify the exact manufacturer document before design approval.

ManufacturerSTMicroelectronics
Ordering codeSTGWT80V60DF
FamilyDiscrete semiconductors
PackageTO-3P-3, SC-65-3
Product StatusObsolete
IGBT TypeTrench Field Stop
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector (Ic) (Max)120 A
Current - Collector Pulsed (Icm)240 A
Vce(on) (Max) @ Vge, Ic2.3V @ 15V, 80A
Power - Max469 W
Switching Energy1.8mJ (on), 1mJ (off)
Input TypeStandard
Gate Charge448 nC
Td (on/off) @ 25°C60ns/220ns
Test Condition400V, 80A, 5Ohm, 15V
Reverse Recovery Time (trr)60 ns
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-3P-3, SC-65-3
Supplier Device PackageTO-3P

Documents and evidence

STGWT80V60DF ↗

Catalog sources

www.ic-components.com · STGWT80V60DF ↗

Source directory identity match; source detail pending. Specifications remain from existing catalog.

Before sourcing STGWT80V60DF

  1. Identify the firmware and board baseline
  2. Check flash, RAM and required peripherals
  3. Review pin assignment and supply limits
  4. Keep the full temperature and package suffix
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