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STMicroelectronics · Discrete semiconductors

STH15NB50FI

MOSFET N-CH 500V 10.5A ISOWAT218

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STH15NB50FI component illustration
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STH15NB50FI specifications

Recorded source facts. Missing values are kept explicit; verify the exact manufacturer document before design approval.

ManufacturerSTMicroelectronics
Ordering codeSTH15NB50FI
FamilyDiscrete semiconductors
PackageISOWATT-218-3
Product StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500 V
Current - Continuous Drain (Id) @ 25°C10.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs360mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs80 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds3400 pF @ 25 V
FET FeatureNot provided in source
Power Dissipation (Max)80W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageISOWATT-218
Package / CaseISOWATT-218-3

Documents and evidence

STH15NB50FI ↗

Catalog sources

www.ic-components.com · STH15NB50FI ↗

Source directory identity match; source detail pending. Specifications remain from existing catalog.

Before sourcing STH15NB50FI

  1. Identify the firmware and board baseline
  2. Check flash, RAM and required peripherals
  3. Review pin assignment and supply limits
  4. Keep the full temperature and package suffix
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