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STMicroelectronics · Discrete semiconductors

STH185N10F3-6

MOSFET N-CH 100V 180A H2PAK-6

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STH185N10F3-6 component illustration
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STH185N10F3-6 specifications

Recorded source facts. Missing values are kept explicit; verify the exact manufacturer document before design approval.

ManufacturerSTMicroelectronics
Ordering codeSTH185N10F3-6
FamilyDiscrete semiconductors
PackageTO-263-7, D²Pak (6 Leads + Tab)
Product StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C180A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs4.5mOhm @ 60A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs114.6 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds6665 pF @ 25 V
FET FeatureNot provided in source
Power Dissipation (Max)315W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageH2PAK-6
Package / CaseTO-263-7, D²Pak (6 Leads + Tab)

Documents and evidence

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Catalog sources

www.ic-components.com · STH185N10F3-6 ↗

Source directory identity match; source detail pending. Specifications remain from existing catalog.

Before sourcing STH185N10F3-6

  1. Identify the firmware and board baseline
  2. Check flash, RAM and required peripherals
  3. Review pin assignment and supply limits
  4. Keep the full temperature and package suffix
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